sapphire substrate

英 [ˈsæfaɪə(r) ˈsʌbstreɪt] 美 [ˈsæfaɪər ˈsʌbstreɪt]

网络  蓝宝石衬底; 蓝宝石基板; 提供蓝宝石基片加工; 蓝宝石基片; 蓝宝石基板短缺

计算机



双语例句

  1. And then, a2D pattern was ablated onto the sapphire substrate by scanning approach.
    利用扫描刻蚀法在蓝宝石基片上加工了一个二维图形。
  2. Analysis of Influencing Factors of Sapphire Substrate CMP Removal Rate
    蓝宝石衬底材料CMP去除速率的影响因素
  3. Effects of Thickness on the Properties of ITO Thin Films Grown on Sapphire Substrate
    膜层厚度对蓝宝石衬底上生长的ITO薄膜性质的影响
  4. Investigation of n-type GaN deposited on sapphire substrate with different small misorientations
    淀积在不同小倾角蓝宝石衬底的n型GaN的研究
  5. Grinding Performance of Soft Abrasive Grinding Wheel Used in Ultra-precision Grinding Sapphire Substrate; The most common finishing operations are mechanical, such as milling, grinding, or polishing with abrasives.
    超精密磨削蓝宝石基片的软磨料砂轮磨削性能最普通的精加工工序是用机械的方法,如研磨,磨削或用磨料抛光。
  6. Enhanced external quantum efficiency of light emitting diodes by fabricating two-dimensional photonic crystal sapphire substrate with holographic technique
    全息技术制作二维光子晶体蓝宝石衬底提高发光二极管外量子效率
  7. Study on Soft Abrasive Wheel Preparation and Properties of Sapphire Substrate Grinding
    磨削蓝宝石基片的软磨料砂轮的研制及性能研究
  8. A wet chemical etching method of n-GaN epitaxial layer grown on a sapphire substrate by MOCVD is investigated using UV of high pressure mercury lamp.
    MOCVD用高压汞灯对n-GaN处延层进行了辐照湿法化学刻蚀研究,这种外延层是在A12O3衬底上用MOCVD方法生长的。
  9. Patterned c-plane sapphire substrate is prepared by chemical etching.
    采用化学方法腐蚀c-面蓝宝石衬底,以形成一定的图案;
  10. The mechanisms for polarity selection of GaN on sapphire substrate both in MOVPE and MBE growth are discussed based on the "two monolayers of Al" model, which also gives a reasonable explanation to the polarity reversion mechanism by AlN.
    以双Al单层模型讨论了用MOVPE和MBE法在蓝宝石衬底上生长GaN的极性选择的机理,并对AlN在极性转换过程中的作用给出了适当的解释。
  11. Study of Processing and Properties of Si_3N_4 Films Prepared on Sapphire Substrate
    蓝宝石衬底上Si3N4膜系的制备工艺与性能研究
  12. Research of Chemical Mechanical Polishing Technique of Sapphire Substrate
    蓝宝石衬底的化学机械抛光技术的研究
  13. The experiment results showed we had got well nanowires on Si and sapphire substrate and the Au and Ag act catalyst respectively, we got ZnO nanowires array on Si and sapphire substrate using the Ag as catalyst.
    实验结果显示分别采用金和银为催化剂在硅衬底和蓝宝石衬底上制备出结晶质量较好的纳米线,其中在银催化的硅基片和蓝宝石基片上制备出排列整齐的纳米线阵列。
  14. Influence of Surface Treatment on the Sapphire Substrate
    表面处理对蓝宝石衬底的影响
  15. In this paper, using double-sided YBCO thin film on sapphire substrate, we designed an 8 pole and a 12 pole HTS ( high temperature superconducting) filters for WCDMA Mobile Communication System.
    基于Sapphire基片的双面YBCO超导薄膜,设计了应用于第三代移动通信系统&WCDMA移动通信系统的8节和12节高温超导滤波器。
  16. Structural and Optical Properties Characterization of GaN Film Deposited on Sapphire Substrate
    蓝宝石衬底上GaN薄膜的结构和光学特性表征
  17. Study of ECR-Plasma Cleaning and Nitridation of Sapphire Substrate by RHEED
    蓝宝石衬底的ECR等离子体清洗与氮化的RHEED研究
  18. Study on NH_3 Doping in ZnO Film Grown on R-plane of Sapphire Substrate
    蓝宝石R面上ZnO薄膜的NH3掺杂研究
  19. We get nanometer-sized InSb particle films deposited on the sapphire substrate by using the method of evaporation in gas.
    用气体中蒸发的方法在蓝宝石基片上制备了纳米InSb颗粒膜。
  20. ZnO films are grown on ( 001) sapphire substrate by plasma-assisted MOCVD.
    利用等离子体MOCVD设备在(001)蓝宝石上生长了ZnO薄膜。
  21. The study of epitaxial growth ZnO thin film on a ( 0112) sapphire substrate
    用微波ECR等离子体溅射法在蓝宝石(0112)晶面上生长ZnO薄膜的研究
  22. The corresponding two samples were grown by metal-organic-chemical-vapor-deposition ( MOCVD) on sapphire substrate.
    采用金属有机物化学气相淀积(MOCVD)技术在蓝宝石衬底上制备了样品。
  23. High temperature treating of sapphire substrate surface;
    找出了较理想的Al2O3衬底表面高温处理条件;
  24. High-quality GaN film was successfully deposited on ( 0001)-oriented sapphire substrate by low-pressure metal-organic chemical vapor deposition ( LPMOCVD) process.
    采用低压金属有机化学气相沉积(LPMOCVD)法,成功地在(0001)晶向的蓝宝石(Al2O3)衬底上制备了高质量的GaN薄膜。
  25. High Purity GaN films have been grown on sapphire substrate by MOVPE.
    用MOVPE方法在蓝宝石衬底上生长了高纯氮化镓(GaN)外延材料。
  26. GaN films are grown by LP-MOCVD on surface treated sapphire substrate and common c-plane sapphire substrate.
    利用LP-MOCVD在经过表面处理的蓝宝石衬底上以及常规c-面蓝宝石衬底上外延生长GaN薄膜。
  27. LED wafer bonding, the attachment of LED epitaxial wafer to another substrate such as GaP transparent substrate, metal mirror substrate or sapphire substrate, increases the light emitting efficiency.
    LED晶片键合技术可以把LED外延片和GaP透明衬底、金属镜面衬底或蓝宝石衬底结合以提高出光效率。
  28. Through repeated experimental investigation, a composite nano-crystalline structured thin film was realized on the sapphire substrate, and the devitrification effect at high temperature has been eliminated.
    通过反复的实验研究,在蓝宝石基底上研制出了具有复合相纳米晶结构的薄膜,解决了光学膜在高温下由于结晶而产生失透的问题。
  29. The effects of nitrided sapphire substrate on the growth of preferentially orientated AIN films by reactive magnetron sputtering at room temperature.
    Sapphire表面氮化处理对AlN薄膜反应磁控溅射室温生长影响的研究。
  30. XRD and φ scanning results showed that the Pt film has ( 111) preferred orientation and good extension with sapphire substrate.
    XRD以及φ扫描的结果表明Pt薄膜择优取向为(111)并且与蓝宝石基片有良好的外延关系。